Infineon High Power IGBT Module For Electric Locomotive BSM75GB120DN2

Infineon IGBT Power Module BSM75GB120DN2 or BSM75GB12ODN2

BSM75GB120DN2

Product Description

Manufacture: INFINEON TECHNOLOGIES

Type of module: IGBT

Semiconductor structure: Transistor

Topology: IGBT half-bridge

Off state voltage max: 600V

Collector current: 75A

Power: 625W

Max. forward impulse current: 150A

Case: AG-34MM-1

Electrical mounting: screw

Mounting: screw

Operating temperature: -40...125°C

Gate - emitter voltage: ±20V

Item Number: BSM75GB120DN2

Item Category:Transistors

Subcategory:IGBTs

Type:Dual

Vces:1,200 Volts DC

Ic:75 Amps

Vges +/-:20

Ices Max:1.5 MilliAmps

Iges Max:0.32 MicroAmps

Vge(th) Min/Max:6.5 Volts

Vce(sat) Max:3 Volts

Height (mm):30.5

Width (mm):94

Depth (mm):34

H x W x D:1.2 in x 3.7 in x 1.34 in

Net Weight:8.8175 OZ

Gross Weight:5.6 OZ

Product Details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.